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SN74CBT3345C 具有 -2V 下冲保护的 8 位 FET 总线开关

数据:

描述

The SN74CBT3345C is a high-speed TTL-compatible FET bus switch with low ON-state resistance (ron), allowing for minimal propagation delay. Active Undershoot-Protection Circuitry on the A and B ports of the SN74CBT3345C provides protection for undershoot up to –2 V by sensing an undershoot event and ensuring that the switch remains in the proper OFF state.

The SN74CBT3345C is organized as an 8-bit bus switch with two output-enable (OE, OE\) inputs. When OE is high or OE\ is low, the bus switch is ON, and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE is low and OE\ is high, the bus switch is OFF and the high-impedance state exists between the A and B ports.

This device is fully specified for partial-power-down applications using Ioff. The Ioff feature ensures that damaging current will not backflow through the device when it is powered down.

To ensure the high-impedance state during power up or power down, OE\ should be tied to VCC through a pullup resistor and OE should be tied to GND through a pulldown resistor; the minimum value of the resistor is determined by the current-sinking/current-sourcing capability of the driver.

特性

  • 对A和B端口上的隔离进行下冲保护,最高可达?? 2
  • 双向数据流,带近零传播延迟
  • 低导通电阻(r on )特性(r on = 3 典型的)
  • 低输入/输出电容可最大限度地减少加载和信号失真C io(OFF) = 5.5 pF典型值)
  • 数据和控制输入提供下冲钳位二极管
  • 低功耗I CC =3μAMax)
  • V CC 工作范围4 V至5.5 V
  • 数据I /O支持0至5 V信号电平(0.8 V,1.2 V,1.5 V, 1.8 V,2.5 V,3.3 V,5 V)
  • 控制输入可由TTL或5 V /3.3 V CMOS输出驱动
  • I off 支持部分断电模式操作
  • 闩锁性能超过每JESD 78 mA,Class II
  • 每个JESD 22测试的ESD性能
    • 2000-V Hu人体模型(A114-B,II类)
    • 1000 V充电设备模型(C101)
  • 支持数字和模拟应用:USB接口,存储器交错,总线隔离,低失真信号门控

参数 与其它产品相比 模拟开关/多路复用器

 
Configuration
Number of Channels (#)
Power Supply Type
Vss (Min) (V)
Vss (Max) (V)
Vdd (Min) (V)
Vdd (Max) (V)
Ron (Typ) (Ohms)
Bandwidth (MHz)
Rating
Operating Temperature Range (C)
Package Size: mm2:W x L (PKG)
Package Group
Supply Range (Max)
Ron (Max) (Ohms)
Input/Output Continuous Current (Max) (mA)
Supply Current (Max) (uA)
Features
OFF-state leakage current (Max) (µA)
Input/Output ON-state Capacitance (Typ) (pF)
Input/Output OFF-state Capacitance (Typ) (pF)
ESD Charged Device Model (kV)
ESD HBM (kV)
VIL (Max) (V)
VIH (Min) (V)
SN74CBT3345C
1:1 SPST    
8    
Single    
N/A    
N/A    
4    
5.5    
3    
200    
Catalog    
-40 to 85    
20SOIC: 132 mm2: 10.3 x 12.8(SOIC)
20SSOP: 52 mm2: 6 x 8.65(SSOP)
20TSSOP: 42 mm2: 6.4 x 6.5(TSSOP)    
SOIC
SSOP
TSSOP    
5.5    
12    
128    
50    
Powered off protection
-2V undershoot protection    
10    
14    
5.5    
1    
2    
0.8    
2    

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