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此37mΩ12VN沟道FemtoFET™MOSFET技术经过了设计和优化,能够以最大限度减小许多手持式和移动类应用中的封装尺寸。这项技术能够在替代标准小信号MOSFET的同时将封装尺寸减小60%以上。
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| VDS (V) |
| Configuration |
| Rds(on) Max at VGS=4.5V (mOhms) |
| Rds(on) Max at VGS=10V (mOhms) |
| IDM, Max Pulsed Drain Current (Max) (A) |
| QG Typ (nC) |
| QGD Typ (nC) |
| Package (mm) |
| RDS(on) Typ at VGS=2.5V (Typ) (mOhm) |
| VGS (V) |
| VGSTH Typ (V) |
| Logic Level |
| CSD13383F4 | CSD13380F3 | CSD13381F4 | CSD13385F5 | CSD17382F4 | CSD17484F4 | CSD17585F5 |
|---|---|---|---|---|---|---|
| 12 | 12 | 12 | 12 | 30 | 30 | 30 |
| Single | Single | Single | Single | Single | Single | Single |
| 44 | 76 | 180 | 19 | 67 | 128 | 33 |
| 27 | ||||||
| 27 | 13.5 | 7 | 41 | 14.8 | 18 | 34 |
| 2 | 0.91 | 1.06 | 3.9 | 2.1 | 0.92 | 1.9 |
| 0.6 | 0.15 | 0.14 | 0.39 | 0.63 | 0.075 | 0.39 |
| LGA 1.0 x 0.6mm | LGA0.6x0.7 | LGA 1.0 x 0.6mm | LGA 0.8x1.5 | LGA 1.0 x 0.6mm | LGA 1.0x0.6mm | LGA 0.8x1.5 |
| 53 | 73 | 170 | 18 | 67 | 125 | |
| 10 | 8 | 8 | 8 | 10 | 12 | 20 |
| 1 | 0.85 | 0.85 | 0.8 | 0.9 | 0.85 | 1.3 |
| Yes | Yes | Yes | Yes | Yes | Yes | Yes |