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NexFET™功率MOSFET旨在最大限度地降低功率转换应用中的损耗。
NexFET是德州仪器公司的商标。
| VDS (V) |
| Configuration |
| Rds(on) Max at VGS=4.5V (mOhms) |
| Rds(on) Max at VGS=10V (mOhms) |
| IDM, Max Pulsed Drain Current (Max) (A) |
| QG Typ (nC) |
| QGD Typ (nC) |
| Package (mm) |
| VGS (V) |
| VGSTH Typ (V) |
| ID, Silicon limited at Tc=25degC (A) |
| ID, package limited (A) |
| Logic Level |
| CSD16413Q5A | CSD16403Q5A | CSD16410Q5A | CSD16412Q5A |
|---|---|---|---|
| 25 | 25 | 25 | 25 |
| Single | Single | Single | Single |
| 5.6 | 3.7 | 12 | 16 |
| 3.9 | 2.8 | 8.5 | 11 |
| 156 | 184 | 158 | 91 |
| 9 | 13.3 | 3.9 | 2.9 |
| 2.5 | 3.5 | 1.1 | 0.7 |
| SON5x6 | SON5x6 | SON5x6 | SON5x6 |
| 16 | 16 | 16 | 16 |
| 1.6 | 1.6 | 1.9 | 2 |
| 59 | 52 | ||
| 100 | 100 | ||
| Yes | Yes | Yes | Yes |
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