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数据： CSD19531KCS 100V N 通道 NexFET功率金属氧化物半导体场效应晶体管 (MOSFET) 数据表 (Rev. C)
此100V，6.4mΩ，TO-220 NexFET™功率MOSFET被设计成功率转换应用中大大降低损耗。
所有商标均为其各自所有者的财产。
| VDS (V) |
| Configuration |
| Rds(on) Max at VGS=10V (mOhms) |
| IDM, Max Pulsed Drain Current (Max) (A) |
| QG Typ (nC) |
| QGD Typ (nC) |
| Package (mm) |
| VGS (V) |
| VGSTH Typ (V) |
| ID, Silicon limited at Tc=25degC (A) |
| ID, package limited (A) |
| Logic Level |
| CSD19531KCS | CSD19531Q5A | CSD19532Q5B | CSD19533KCS | CSD19533Q5A | CSD19535KCS | CSD19536KCS |
|---|---|---|---|---|---|---|
| 100 | 100 | 100 | 100 | 100 | 100 | 100 |
| Single | Single | Single | Single | Single | Single | Single |
| 7.7 | 6.4 | 4.9 | 10.5 | 9.5 | 3.6 | 2.7 |
| 285 | 337 | 400 | 207 | 231 | 400 | 400 |
| 38 | 37 | 48 | 27 | 27 | 78 | 118 |
| 7.5 | 6.6 | 8.7 | 5.4 | 4.9 | 13 | 17 |
| TO-220 | SON5x6 | SON5x6 | TO-220 | SON5x6 | TO-220 | TO-220 |
| 20 | 20 | 20 | 20 | 20 | 20 | 20 |
| 2.7 | 2.7 | 2.6 | 2.8 | 2.8 | 2.7 | 2.5 |
| 110 | 110 | 140 | 86 | 75 | 187 | 259 |
| 100 | 100 | 100 | 100 | 100 | 150 | 150 |
| No | No | No | No | No | No | No |
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