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这款25 V，3.8mΩ，3.3×3.3 mm SON NexFET™功率MOSFET旨在最大限度地降低功率转换损耗，并针对5 V栅极驱动应用进行了优化。
| VDS (V) |
| Configuration |
| Rds(on) Max at VGS=4.5V (mOhms) |
| IDM, Max Pulsed Drain Current (Max) (A) |
| QG Typ (nC) |
| QGD Typ (nC) |
| Package (mm) |
| RDS(on) Typ at VGS=2.5V (Typ) (mOhm) |
| VGS (V) |
| VGSTH Typ (V) |
| ID, Silicon limited at Tc=25degC (A) |
| ID, package limited (A) |
| Logic Level |
| CSD16340Q3 | CSD16323Q3 | CSD16327Q3 |
|---|---|---|
| 25 | 25 | 25 |
| Single | Single | Single |
| 5.5 | 5.5 | 4.8 |
| 115 | 112 | 112 |
| 6.5 | 6.2 | 6.2 |
| 1.2 | 1.1 | 1.1 |
| SON3x3 | SON3x3 | SON3x3 |
| 6.1 | ||
| 10 | 10 | 10 |
| 0.85 | 1.1 | 1.2 |
| 21 | ||
| 60 | 60 | 60 |
| Yes | Yes | Yes |
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