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NexFET™功率MOSFET旨在最大限度地降低功率转换应用中的损耗。
NexFET是德州仪器公司的商标。
| VDS (V) |
| Configuration |
| Rds(on) Max at VGS=4.5V (mOhms) |
| Rds(on) Max at VGS=10V (mOhms) |
| IDM, Max Pulsed Drain Current (Max) (A) |
| QG Typ (nC) |
| QGD Typ (nC) |
| Package (mm) |
| VGS (V) |
| VGSTH Typ (V) |
| ID, Silicon limited at Tc=25degC (A) |
| ID, package limited (A) |
| Logic Level |
| CSD16408Q5 | CSD16401Q5 | CSD16407Q5 | CSD16414Q5 | CSD16415Q5 |
|---|---|---|---|---|
| 25 | 25 | 25 | 25 | 25 |
| Single | Single | Single | Single | Single |
| 6.8 | 2.3 | 3.3 | 2.6 | 1.8 |
| 4.5 | 1.6 | 2.4 | 1.9 | 1.15 |
| 141 | 240 | 200 | 213 | 200 |
| 6.7 | 21 | 13.3 | 16.6 | 21 |
| 1.9 | 5.2 | 3.5 | 4.4 | 5.2 |
| SON5x6 | SON5x6 | SON5x6 | SON5x6 | SON5x6 |
| 16 | 16 | 16 | 16 | 16 |
| 1.8 | 1.5 | 1.6 | 1.6 | 1.5 |
| 113 | ||||
| 100 | 100 | 100 | 100 | 100 |
| Yes | Yes | Yes | Yes | Yes |
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