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LMC660 CMOS四路运算放大器非常适合单电源供电。它的工作电压范围为+ 5V至+ 15.5V,除了包括接地的输入共模范围外,还具有轨到轨输出摆幅。过去困扰CMOS放大器的性能限制不是这种设计的问题。输入V OS ,漂移和宽带噪声以及电压增益到实际负载(2kΩ和600Ω)都等于或优于广泛接受的双极性等效电路。
芯片采用TI先进的双多晶硅栅极CMOS工艺制造。
请参阅LMC662数据表,了解具有相同功能的双CMOS运算放大器。
所有商标均为其各自所有者的财产。
| Number of Channels (#) |
| Total Supply Voltage (Min) (+5V=5, +/-5V=10) |
| Total Supply Voltage (Max) (+5V=5, +/-5V=10) |
| GBW (Typ) (MHz) |
| Slew Rate (Typ) (V/us) |
| Rail-to-Rail |
| Vos (Offset Voltage @ 25C) (Max) (mV) |
| Iq per channel (Typ) (mA) |
| Vn at 1kHz (Typ) (nV/rtHz) |
| Rating |
| Operating Temperature Range (C) |
| Package Group |
| Package Size: mm2:W x L (PKG) |
| Offset Drift (Typ) (uV/C) |
| Features |
| Input Bias Current (Max) (pA) |
| CMRR (Typ) (dB) |
| Output Current (Typ) (mA) |
| Architecture |
| LMC660 |
|---|
| 4 |
| 4.75 |
| 15.5 |
| 1.4 |
| 1.1 |
| In to V- Out |
| 3 |
| 0.38 |
| 22 |
| Catalog |
| -40 to 85 0 to 70 |
| PDIP SOIC |
| See datasheet (PDIP) 14SOIC: 52 mm2: 6 x 8.65(SOIC) |
| 1.3 |
| N/A |
| 0.2 |
| 83 |
| 21 |
| CMOS |