应用指导 | CGAN004: GaN FET loss calculation (Boost converter)

众所周知，GaN 功率器件具有传统功率器件无可比拟的性能优势，如大幅提升的开关速度和显著降低的开关损耗，从而提供更优的整体效率，这使得GaN器件在高频、高效率的应用中展现出明显优势。我们的应用指导将帮助客户更好地使用云镓的 GaN 器件，更大限度去挖掘云镓的 GaN 器件的能力。本次发布云镓应用手册第三弹: GaN FET loss calculation (Boost converter)。此外，客户可以通过云镓半导体官方网站或者微信公众号了解到更多云镓 GaN 产品资讯和相关技术文档。

Part 1: Basic information

01

Zero Qrr enables GaN to work in CCM TP-PFC?

In each half cycle of the AC input, the TP-PFC can be analyzed as a synchronous boost converter.

02

Synchronous CCM boost converter – waveforms

Part 2: Detailed analysis

01

Loss breakdown of a boost

02

Loss breakdown of GaN FETs: SW conduction loss

03

Loss breakdown of GaN FETs: SW+SR Coss loss

CloudSemi GaN has a superior Qosscomparing to other GaN vendors.

04

Loss breakdown of GaN FETs: SW I-V overlap loss

05

Switching time - tir

06

Switching time - tvf

07

Switching time – tvr & tif

08

Loss breakdown of GaN FETs: SR conduction loss

09

Loss breakdown of GaN FETs: SR deadtime loss

Part 3 : Summary

01

Summary

图腾柱 PFC 效率计算可以参考 Boost 损耗计算方式，在此不再赘述。