全天直播即将开启丨英飞凌宽禁带开发者论坛 四大亮点抢先看

宽禁带（WBG）解决方案将能效提升到了新高度。凭借其更高的功率密度和更小的封装尺寸，它们是实现可持续设计的关键。英飞凌的WBG产品组合表现如何？能为开发者带来哪些益处？

英飞凌全球宽禁带开发者论坛，2025年3月11日北京时间下午4点，全天直播即将开启！

01

英飞凌科技零碳工业功率事业部总裁Peter Wawer博士和电源与传感器系统事业部总裁Adam White发表主题演讲，深入分享市场发展趋势和英飞凌的宽禁带（WBG）战略。

02

包含英飞凌全系列的宽禁带（WBG）功率半导体产品，包括分立器件、模块以及高集成度解决方案，其中GaN产品涵盖40V至700V，SiC产品涵盖400V至3.3kV，释放SiC和GaN的全部潜力，提供极致的设计灵活性。

03

涵盖碳化硅（SiC）和氮化镓（GaN）的全面技术分享，深入探讨是什么让CoolSiC和CoolGaN成为太阳能、储能、逆变器设计以及车载电动汽车充电等应用的理想解决方案。您将看到许多不同的应用如何利用SiC和GaN的优势。

●Top-Side Cooling (TSC) solutions for industrial andrenewable applications with SiC MOSFET

Qurat Akbar

Staff Product Application Engineer for Discrete SiC MOSFETs & diodes

●SiC 2.3 kV power modules asenabler towards a clean energy transition –

examples for wind and energy storagesystems

Dr. Marcel Morisse

Principal Engineer High Power Modules

●Keep on driving with WBG innovation for traction inverters

Mark Münzer

Fellow Motor Control Solutions

04

特邀客户分享项目经验以及应用体验：

●SiC in Siemens ET200SP e-Starter3RD1

Thomas List

Siemens AG

Product owner

●Advanced multi-variant fusion concept for enhanced traction inverterintelligence, cost effectiveness and practicality

Allen Liu

Suzhou Inovance Automotive Co.,ltd.

Director, Chief Engineer

Hardware Pre-research and Platform R&D Center

报名后，您将收到一封确认电子邮件，内含当天直播观看链接。

议程一览（北京时间）：

16:00 – 16:05

Welcome and introduction

Dr. Peter Friedrichs, Fellow
Eva Gabriel, Director Product Marketing SiC

16:05 – 16:30

Opening Keynote – Expanding ourleadership in power systems through Wide Bandgap

Dr. Peter Wawer

Division President Green Industrial Power

Adam White

Division President Power & Sensor Systems

16:30– 17:00

SiC in Siemens ET200SP e-Starter3RD1

Thomas List

Siemens AG

Product owner

17:00 – 17:30

Advanced multi-variant fusion concept for enhanced traction inverterintelligence, cost effectiveness and practicality

Allen Liu

Suzhou Inovance Automotive Co.,ltd.

Director, Chief Engineer

Hardware Pre-research and Platform R&D Center

17:30 – 18:00

Top-Side Cooling (TSC) solutions for industrial andrenewable applications with SiC MOSFET

Qurat Akbar

Staff Product Application Engineer for Discrete SiC MOSFETs & diodes

18:00 – 18:30

SiC 2.3 kV power modules asenabler towards a clean energy transition –

examples for wind and energy storagesystems

Dr. Marcel Morisse

Principal Engineer High Power Modules

18:30 – 19:00

SiC .XT interconnect: enabling SiC for long lifetime in high power applications

Dr. Torsten Methfessel

Principal Engineer Quality & Reliability

19:00 – 19:30

Challenges and solutions to power latest AI processorgenerations for hyperscale data centers

Dr. Matthias Kasper

Lead Principal Engineer at System Innovations Lab

19:30 – 20:00

Dinner break (Beijing time)

20:00 – 20:30

Why GaN in Photovoltatics?

Richard Brace

BRC Solar, Head of Innovation and Research

20:30 – 21:00

Driving the future of Motor Control with 650V GaN

Ariza Javier

Principal System Application Engineer power conversion

21:00 – 21:30

Highly integrated coin-sized 1 kW GaN-basedmotor drive

Dr. Edward A. Jones

Principal Engineer in GaNApplication Development

Dr. Maurizio Incurvati

LeadPrincipal Engineer System Architect for Innovation in Motor Drives

21:30 – 22:00

GaN Monolithic Bi-directional Switch - A New Paradigm in Power Electronics

Dr. Kennith K. Leong

Lead Principal, Product Definition and Concept Engineer for CoolGaN HV BDS

22:00 – 22:15

15 Min. Coffee break

22:15 – 22:45

Value Proposition of GaN in OBC

Lucas Lu

Senior Director Technical Marketing GaN Auto

22:45 – 23:15

Keep on driving with WBG innovation for traction inverters

Mark Münzer

Fellow Motor Control Solutions

23:15 – 23:45

Automotive & Industrial MCUs for Software-controlledhigh Density Power Conversion’

Dr. Jürgen Stahl

Principal System Engineering

Klaus Scheibert

Senior Principal PT&xEV

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