完善资料让更多小伙伴认识你,还能领取20积分哦,立即完善>
数据: TS3DDR4000 12 位 1:2 高速 DDR2/DDR3/DDR4 开关/多路复用器 数据表 (Rev. B)
TS3DDR4000是一款1:2或2:1高速DDR2 /DDR3 /DDR4开关,可实现12位宽总线切换。该器件可针对所有位同时将A端口切换为B或C端口.TS3DDR4000设计用于DDR2,DDR3和DDR4存储器总线系统,并且采用一种专有架构,可提供高带宽(单端5.6GHz下的带宽为-3dB),这个,TS3DDR4000还具有低功耗模式。所有通道均呈高阻态且器件功耗最低。
所有商标均为其各自所有者的财产。
| Protocols |
| Configuration |
| Number of Channels (#) |
| VCC (Min) (V) |
| VCC (Max) (V) |
| Ron (Typ) (Ohms) |
| Input/Ouput Voltage (Min) (V) |
| Input/Ouput Voltage (Max) (V) |
| ICC (Max) (uA) |
| Bandwidth (MHz) |
| ESD HBM (Typ) (kV) |
| Operating Temperature Range (C) |
| Package Size: mm2:W x L (PKG) |
| Package Group |
| Crosstalk (dB) |
| ESD Charged Device Model (kV) |
| ICC (Typ) (uA) |
| Input/Output OFF-state Capacitance (Typ) (pF) |
| Input/Output ON-state Capacitance (Typ) (pF) |
| OFF-state leakage current (Max) (µA) |
| Propagation Delay (ns) |
| Ron (Max) (Ohms) |
| Ron Channel Match (Max) (Ω) |
| RON Flatness (Typ) (Ohms) |
| Turn off Time (Disable) (Max) (ns) |
| Turn on Time (Enable) (Max) (ns) |
| VIH (Min) (V) |
| VIL (Max) (V) |
| TS3DDR4000 |
|---|
|
DDR2 DDR3 DDR4 |
| 2:1 SPDT |
| 12 |
| 2.375 |
| 3.6 |
| 8.3 |
| 0 |
| 3.3 |
| 48 |
| 6000 |
| 3 |
| -40 to 85 |
| 48NFBGA: 24 mm2: 3 x 8(NFBGA) |
| NFBGA |
| -68 |
| 1 |
| 40 |
| 1 |
| 0.5 |
| 5 |
| 85 |
| 11.2 |
| 1 |
| 0.6 |
| 65 |
| 65 |
| 1.4 |
| 0.5 |