cy7c1371d/cy7c1373d，18-mbit流通的SRAM诺博（TM）体系结构

　　The CY7C1371D/CY7C1373D is a 3.3 V， 512K × 36/1M × 18 synchronous flow through burst SRAM designed specifically to support unlimited true back-to-back read/write operations with no wait state insertion. The CY7C1371D/CY7C1373D is equipped with the advanced No Bus Latency （NoBL） logic required to enable consecutive read/write operations with data being transferred on every clock cycle. This feature dramatically improves the throughput of data through the SRAM， especially in systems that require frequent write-read transitions. All synchronous inputs pass through input registers controlled by the rising edge of the clock. The clock input is qualified by the clock enable （CEN） signal， which when deasserted suspends operation and extends the previous clock cycle. Maximum access delay from the clock rise is 6.5 ns （133-MHz device）。 Write operations are controlled by the two or four byte write select （BWX） and a write enable （WE） input. All writes are conducted with on-chip synchronous self-timed write circuitry. Three synchronous chip enables （CE1， CE2， CE3） and an asynchronous output enable （OE） provide for easy bank selection and output tristate control. To avoid bus contention， the output drivers are synchronously tristated during the data portion of a write sequence. For a complete list of related documentation， click here.