RA6快速设计指南 [11] 存储器 (3)-电子发烧友网

存储器

8.5 外部存储器

RA6 MCU包含用于连接到外部存储器和器件的外部数据总线。某些产品还包括一个内置的SD RAM 控制器，可通过该控制器使用最高达128MB的外部SDRAM。八个可编程片选提供了许多选项，可以在每个片选上设置这些选项，以允许连接到各种外部器件。存储器映射的外部片选区域地址从0x60000000开始。有关更多详细信息，请参见《硬件用户手册》。

8.5.1 使用外部16位存储器器件

连接具有字节选择线的外部16位存储器器件时，将MCU的A1连接到存储器的A0，将MCU的A0连接到字节选择线。

8.5.2 SDRAM初始化示例

Renesas FSP提供了采用CMSIS数据结构的C语言头文件，此文件映射了所有外部总线控制寄存器。以下函数是在Renesas FSP中使用CMSIS寄存器结构初始化SDRAM存储器控制器的示例。

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void bsp_sdram_init (void)
{
  /** Delay at least 100uS after SDCLK active */ 
  R_BSP_SoftwareDelay(100U, BSP_DELAY_UNITS_MICROSECONDS);


  /** Setting for SDRAM initialization sequence */
#if (BSP_PRV_SDRAM_TRP < 3)
  R_BUS->SDRAM.SDIR_b.PRC = 3U;
#else
  R_BUS->SDRAM.SSDIR_b.PRC = BSP_PRV_SDRAM_TRP - 3U;
#endif


  while(R_BUS->SDRAM.SDSR)
  {
    /* According to h/w maual, need to confirm that all the status bits in SDSR are 0 before SDIR modification. */
  }


  R_BUS->SDRAM.SDIR_b.ARFC = BSP_PRV_SDRAM_SDIR_REF_TIMES; 


  while(R_BUS->SDRAM.SDSR)
  {
    /* According to h/w maual, need to confirm that all the status bits in SDSR are 0 before SDIR modification. */
  }


#if (BSP_PRV_SDRAM_TRFC < 3)
  R_BUS->SDRAM.SDIR_b.ARFI = 0U;
#else
  R_BUS->SDRAM.SDIR_b.ARFI = BSP_PRV_SDRAM_TRFC - 3U;
#endif


  while(R_BUS->SDRAM.SDSR)
  {
    /* According to h/w maual, need to confirm that all the status bits in SDSR are 0 before SDICR modification. */
  }


  /** Start SDRAM initialization sequence.
   * Following operation is automatically done when set SDICR.INIRQ bit.
   * Perform a PRECHARGE ALL command and wait at least tRP time.
   * Issue an AUTO REFRESH command and wait at least tRFC time.
   * Issue an AUTO REFRESH command and wait at least tRFC time.
   */
  R_BUS->SDRAM.SDICR_b.INIRQ = 1U; 
  while(R_BUS->SDRAM.SDSR_b.INIST)
  {
    /* Wait the end of initialization sequence. */
  }


  /** Setting for SDRAM controller */
  R_BUS->SDRAM.SDCCR_b.BSIZE = BSP_PRV_SDRAM_BUS_WIDTH;       /* set SDRAM bus width */
  R_BUS->SDRAM.SDAMOD_b.BE = BSP_PRV_SDRAM_CONTINUOUS_ACCESSMODE;  /* enable continuous access */
  R_BUS->SDRAM.SDCMOD_b.EMODE = BSP_PRV_SDRAM_ENDIAN_MODE;     /* set endian mode for SDRAM address space */


  while(R_BUS->SDRAM.SDSR)
  {
    /* According to h/w maual, need to confirm that all the status bits in SDSR are 0 before SDMOD modification. */
  }
  
  /** Using LMR command, program the mode register */
  R_BUS->SDRAM.SDMOD = ((((uint16_t)(BSP_PRV_SDRAM_MR_WB_SINGLE_LOC_ACC  << 9)
      |(uint16_t)(BSP_PRV_SDRAM_MR_OP_MODE     << 7))
      |(uint16_t)(BSP_PRV_SDRAM_CL         << 4))
      |(uint16_t)(BSP_PRV_SDRAM_MR_BT_SEQUENCTIAL << 3))
      |(uint16_t)(BSP_PRV_SDRAM_MR_BURST_LENGTH  << 0);


  /** wait at least tMRD time */ 
  while(R_BUS-
  >SDRAM.SDSR_b.MRSST)
  {
    /* Wait until Mode Register setting done. */
  }


  /** Set timing parameters for SDRAM */
  R_BUS->SDRAM.SDTR_b.RAS = BSP_PRV_SDRAM_TRAS - 1U;  /* set ACTIVE-to-PRECHARGE command cycles*/
  R_BUS->SDRAM.SDTR_b.RCD = BSP_PRV_SDRAM_TRCD - 1U;  /* set ACTIVEto READ/WRITE delay cycles */
  R_BUS->SDRAM.SDTR_b.RP = BSP_PRV_SDRAM_TRP - 1U;  /* set PRECHARGE command period cycles */
  R_BUS->SDRAM.SDTR_b.WR = BSP_PRV_SDRAM_TWR - 1U;  /* set write recovery cycles */
  R_BUS->SDRAM.SDTR_b.CL = BSP_PRV_SDRAM_CL;     /* set SDRAM column latency cycles */


  /** Set row address offset for target SDRAM */
  R_BUS->SDRAM.SDADR_b.MXC = BSP_PRV_SDRAM_SDADR_ROW_ADDR_OFFSET - 8U;


  R_BUS->SDRAM.SDRFCR_b.REFW = (uint16_t)(BSP_PRV_SDRAM_TRFC - 1U);  /* set Auto-Refresh issuing cycle */
  R_BUS->SDRAM.SDRFCR_b.RFC = BSP_PRV_SDRAM_REF_CMD_INTERVAL - 1U;  /* set Auto-Refresh period */


  /** Start Auto-refresh */
  R_BUS->SDRAM.SDRFEN_b.RFEN = 1U;


  /** Enable SDRAM access */
  R_BUS->SDRAM.SDCCR_b.EXENB = 1U;
}