基于硅隔离技术的耐高温压力传感器研究

采用硅隔离So I (Silicon on Insulator) 技术,应用高能氧离子的注入方法,在单晶硅材料中形
成埋层二氧化硅,用以隔离作为测量电路的顶部硅层与体硅之间因温度升高而造成的漏电流. 采用梁膜结合的压力传递机构,将被测压力与So I 敏感元件隔离开来,因此避免了被测压力的瞬时高温冲击. 给出了传感器的结构模型和实验数据,测试结果表明,这种新型结构的耐高压力传感器,具有较好的动静态特性.
关键词: 硅隔离;压力传递机构;耐高温
Abstract: The silicon on insulator ( So I) technology with seperation by implantation of oxygen (SIMOX) is adopted to develop silicon dioxide buriedy layer in the silicon material. The layer effectively isolates the leak current caused by the high temperaturre between the top silicon layer detecting circuit and body silicon. A combined girder2film pressure t ransferred st ructure is used to isolate the measured pressure and the So I sensitive element , so the instantaneous high temperature (1000 ℃) impact can be avoided. The st ructure model of the t ransducer and the test data are provided in detail. The test result s show that this new type of high temperature resisting pressure t ransducer possesses fine static and dynamic characteristics.
Keywords : silicon on insulator ; pressure t ransf erred st ruct ure ; high temperat ure resisting