| For the past 15 years single crystal sapphire has been at the cutting edge of semiconductor technology. A combination of unique chemical, physical, optical and mechanical properties make sapphire the best choice for a broad spectrum of laboratory and industrial applications. |
| • Chemical resistance. Sapphire is highly inert and resistant to attack in most process environments including hydrofluoric acid and the fluorine plasma applications commonly found in semiconductor wafer processing (NF3, CF4). • Mechanical properties. Sapphire is characterized by high toughness and solidity, and demonstrates excellent resistance in different environments ranging from cryogenic to over 1500°C. Due to this characteristics combined with chemical stability sapphire is widely used in medicine: endoscope and probe lenses, needles for thermal treatment of tumors, scalpels etc. • Electrical properties. Sapphire provides a high, stable dielectric constant with the electrical insulation required for LED, RF and microwave applications. • Optical transmission. Sapphire is characterized by high transmission in the range of UV to near IR. Given the chemical stability, high temperature and high pressure resistance sapphire is the preferred choice for window / viewport applications in high performance vacuum systems, furnaces, deep sea cameras, fire alarm systems etc. • Surface properties. Sapphire can be polished to very high flatness and smoothness for substrate applications and precision mechanical components. • Thermal properties. With a melting point over 2000°C, and high thermal conductivity sapphire is often used in many harsh process environments. • Wear properties. With high hardness and transparency, sapphire is used for scratch proof windows in high wear applications and for precision mechanical components. |
Basic properties |
Crystallline structure
Hexagonal Melting point:
2040°С Thermal expansion index:
6,7 х 10-6 С parallel to С-axis Conductivity
46.06 W/m °K at 0°C Specific resistivity:
5,0 х 10-6 С perpendicular to С-axis Dielectric Constant
average 11.5 (parallel to C-axis) Density
3,98 g/ cm3 Compressive Strength
2 GPa Young Modulus
3.6x104 – 4.4x104 Flexural Strength
35-39 daN/ mm2 Tensile Strength
~400 MPa (at approx. 25°C) Poisson’s Ratio
0.28-0.33 Hardness
9 mohs Refraction Index
No: 1.768 (c-axis) Birefringence
(No-Ne) 0.008 |
Sapphire Transmission |
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Products |
Sapphire ingots for LED, RF and optical applications |
Diameter/Width
5-220 mm Thickness/Length
25 – 500 mm Orientation
C (0001), M (1010), A (1120), R (1102) Surface quality
As-cut, fine-ground Ends/Edge Quality
As-cut, fine-ground |
Sapphire tubes, capillaries and nozzles for mechanical and optical applications: laboratory equipment, semiconductor equipment, optical systems (CVD, plazma reactors, UV treatment of substances, protective sheaths for thermocouples etc.) |
Inner Diameter
0.6 - 30 mm Outer Diameter
2 - 50 mm Length
Up to 600 mm Orientation
Random, C Surface quality
As-grown, fine-ground, 80/50 per MIL-0-13830 Ends/Edge Quality
As-cut |
Sapphire substrates for LED and RF applications |
Diameter
50.8 – 160mm Thickness
0.3 – 5 mm Orientation
C (0001), M (1010), A (1120), R (1102) Surface quality
EPI-polished (Ra<0.5 nm) suitable for epitaxial growth |
Sapphire windows and viewports for UV, visible and near-IR applications (semiconductor equipment, scanners, laser systems, fire alarm systems, deep sea cameras) |
Diameter
1-240 mm Thickness
>/=0.15 mm Orientation
Random, M (1010), A (1120), R (1102), C (0001) Flatness
4 λ per inch Parallelism
<0.5 - 3 angular minutes Chamfer
< /=0.1 - 0.5 mm x 45+/-5 deg Surface quality
80/50, 60/40, 40/20, 20/10. or 10/5 per MIL-0-13830 |
Sapphire rods and blanks for LED, RF, optical, mechanical and medical applications |
Diameter
1-300 mm Thickness
>/=0.15 mm Orientation
C (0001), M (1010), A (1120), R (1102) Surface quality
As-cut, fine-ground |
