一、 CGHV35400F 产品描述
1. CGHV35400F 产品特性
Description Wolfspeed’s CGHV35400F is a gallium nitride (GaN) high electron mobilitytransistor (HEMT) designed specifically with high efficiency, high gain, and widebandwidth capabilities, which makes the CGHV35400F ideal for 2.9 - 3.5 GHzS-Band radar amplifier applications. The transistor is matched to 50-ohms onthe input and 50- ohms on the output. The CGHV35400 is based on Wolfspeed’shigh power density 50 V, 0.4 μm GaN on silicon carbide (SiC) foundry process. Thetransistor is supplied in a ceramic/metal flange package, type 440225.
2. CGHV35400F 技术规格
Features• 2.9 - 3.5 GHz operation• 500 W typical output power• 11 dB power gain• 70% typical drain efficiency• 50 Ohm internally matched• <0.3 dB pulsed amplitude droop
二、 CGHV35400F 应用领域
• 工业控制领域：工业、控制设备美。
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• 广告宣传行业：广告语播报；
三、 CGHV35400F 应用电路图
总结
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