CGHV60075D575 W, 6.0 GHz, GaN HEMT Die

一、CGHV60075D5产品描述

1.产品特性

CGHV60075D5   75 W, 6.0 GHz, GaN HEMT DieDescriptionCree’s CGHV60075D5 is a gallium nitride (GaN) High ElectronMobility Transistor (HEMT). GaN has superior properties comparedto silicon or gallium arsenide, including higher breakdown voltage,higher saturated electron drift velocity, and higher thermalconductivity. GaN HEMTs offer greater power density and widerbandwidths compared to Si and GaAs transistors

2.CGHV60075D5技术规格

Features• 19 dB Typical Small Signal Gain at 4 GHz• 17 dB Typical Small Signal Gain at 6 GHz• 65% Typical Power Added Efficiency at 4 GHz• 60% Typical Power Added Efficiency at 6 GHz• 75 W Typical PSAT• 50 V Operation• High Breakdown Voltage• Up to 6 GHz Operation

二、CGHV60075D5 应用领域

Applications• 2-Way Private Radio• Broadband Amplifiers• Cellular Infrastructure• Test Instrumentation• Class A, AB, Linear amplifiers suitable for OFDM,W-CDMA, EDGE, CDMA waveforms

三、CGHV60075D5 应用电路图

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