CGHV96100F2PN: CGHV96100F2
Package Type: 440217100 W, 8.4 - 9.6 GHz, 50-ohm, Input/OutputMatched GaN HEMTDescriptionWolfspeed’s CGHV96100F2 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT)on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellentpower added efficiency in comparison to other technologies. GaN has superior propertiescompared to silicon or gallium arsenide, including higher breakdown voltage, highersaturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offergreater power density and wider bandwidths compared to GaAs transistors. This IM FET isavailable in a metal/ceramic flanged package for optimal electrical and thermal performance.
Features• 8.4 - 9.6 GHz Operation• 145 W POUT typical• 10 dB Power Gain• 40% Typical PAE• 50 Ohm Internally Matched• <0.3 dB Power Droop
Applications• Marine Radar• Weather Monitoring• Air Traffic Control• Maritime Vessel Traffic Control• Port Security
