Description:
This N channel SGT MOSFET has been designed to very low on-state resistance and
maintain superior switching performance, especial for high efficiency power management
applications.
Parameter
V DS
R DSON , max @V GS = 10V
I D
Features:
• Low FOM R DS(ON) X Q G
• Ultra-low on-resistance
• RoHS compliant (Note 1)
• Halogen-free (Not
60A 40V N沟道 DFN5*6 小封装MOS
型号：
60N04
品牌：
zgsemi(中广芯源)
