产品
-
C3M0065090J碳化硅MOSFET2022-05-22 10:42
产品型号:C3M0065090J 漏源电压:900V 栅极 -源极电压静态:-4/+15V 栅极 -源极电压动态:-8/+19V 脉冲漏极电流:90A 雪崩能量,单脉冲:110mJ -
C3M0065090D碳化硅MOSFET2022-05-22 10:28
产品型号:C3M0065090D 漏源电压:900V 栅极 源极电压静态:-4/+15V 栅极 源极电压动态:-8/+19V 脉冲漏极电流:22A 功耗:45W -
C3M0030090K碳化硅MOSFET2022-05-22 10:16
产品型号:C3M0030090K 漏源电压:900V 栅极 -源极电压静态:-4/+15V 栅极 -源极电压静动:-8/+19V 脉冲漏极电流:200A 功耗:240W -
C3M0120065K碳化硅MOSFET2022-05-21 22:04
产品型号:C3M0120065K 漏源电压:650V 栅极 - 源极电压:-8/+19V 脉冲漏极电流:51A 功耗:86W 工作结温和存储温度:-40 to +175˚C -
C3M0120065J碳化硅MOSFET2022-05-21 21:54
产品型号:C3M0120065J 漏源电压:650V 栅极 - 源极电压:-8/+19V 脉冲漏极电流:51A 功耗:86W 工作结温和存储温度:-40 to +175˚C -
PC3M0120065L碳化硅MOSFET2022-05-21 21:44
产品型号:PC3M0120065L 漏源电压:650V 栅极 - 源极电压:-8/+19V 脉冲漏极电流:51A 功耗:98W 工作结温和存储温度:-40 to +175˚C -
C3M0120065D碳化硅MOSFET2022-05-21 21:40
产品型号:C3M0120065D 漏源电压:650V 栅极 - 源极电压:-8/+19V 脉冲漏极电流:51A 功耗:98W 工作结温和存储温度:-40 to +175˚C -
C3M0060065J碳化硅MOSFET2022-05-21 18:00
产品型号:C3M0060065J 漏源电压:650A 栅极 - 源极电压:-8/+19V 脉冲漏极电流:99A 功耗:136W 工作结温和存储温度:-40 to +175˚C -
C3M0060065D碳化硅MOSFET2022-05-21 17:52
产品型号:C3M0060065D 漏源电压:650A 栅极 - 源极电压:-8/+19V 脉冲漏极电流:99A 功耗:150W 工作结温和存储温度:-40 to +175˚C -
C3M0060065K碳化硅MOSFET2022-05-21 17:40
产品型号:C3M0060065K 漏源电压:650A 栅极 - 源极电压:-8/+19V 脉冲漏极电流:99A 功耗:150W 工作结温和存储温度:-40 to +175˚C