200MHz高传输效率薄膜变压器的设计与制备

200MHz高传输效率薄膜变压器的设计与制备

实现了一种新型的基于硅IC 工艺的微波铁氧体集成薄膜变压器. 铁氧体薄膜采用射频磁控溅射法制备,SEM 观察了SiO2 层上铁氧体膜的表面形貌,表明薄膜容易开裂;能谱仪对薄膜成分的分析表明铁氧体薄膜与SiO2 层和Al 膜附着性差. 通过溅射工艺参数及增加热处理等工艺初步解决了以上存在的薄膜制备工艺与IC 工艺之间的兼容性问题. 采用标准硅基IC 工艺设计和制备了这种新型结构的薄膜变压器,对一组薄膜变压器样品的实验参数在20～210 MHz 的频率范围内作了测试. 测试结果表明:对于设计的匝数比为1 的薄膜变压器,在90～210 MHz 的频率范围内能获得最高为79 %的变压比和良好的波形传输能力.

A novel microwave ferrite thin2film t ransformer based on Si IC technology was presented. RF
magnet ron sp ut tering was used to prepare ferrite t hin film on SiO2 layer . The ferrite film of surface ap2 pear s crack by observation of SEM. EDS analysis of t hin film showed t hat t hin film has poor cohesiveness to SiO2 layer or Al film. These compatible p roblems of t hin film wit h IC technology were resolved t hrough sput tering parameter s modification and heating t reatment addition. The t hin2film t ransformer was fabrica2 tedand t ransmission parameters have been measured at 20 MHz～210 MHz. Experience result s showed that t he maximal Vout and V in radio of t he t hin2film t ransformer s is approximately 79 % at 90 MHz～210MHz ,and t he t hin2film t ransformer has fine waveform t ransmission ability at 20 MHz to 210 MHz.