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数据: CSD18501Q5A 40V N 通道 NexFET 功率金属氧化物半导体场效应晶体管 (MOSFET) 数据表 (Rev. C)
| VDS (V) |
| Configuration |
| Rds(on) Max at VGS=4.5V (mOhms) |
| Rds(on) Max at VGS=10V (mOhms) |
| IDM, Max Pulsed Drain Current (Max) (A) |
| QG Typ (nC) |
| QGD Typ (nC) |
| Package (mm) |
| VGS (V) |
| VGSTH Typ (V) |
| ID, Silicon limited at Tc=25degC (A) |
| ID, package limited (A) |
| Logic Level |
| CSD18501Q5A |
|---|
| 40 |
| Single |
| 4.3 |
| 3.2 |
| 400 |
| 42 |
| 5.9 |
| SON5x6 |
| 20 |
| 1.8 |
| 161 |
| 100 |
| Yes |