LF357N芯片资料

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上传日期: 2011-03-04

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标签:LF357N(1)芯片资料(17)

amplifiers
to incorporate well matched, high voltage JFETs on the
same chip with standard bipolar transistors (BI-FET™ Technology).
These amplifiers feature low input bias and offset
currents/low offset voltage and offset voltage drift, coupled
with offset adjust which does not degrade drift or
common-mode rejecTIon. The devices are also designed for
high slew rate, wide bandwidth, extremely fast settling TIme,
low voltage and current noise and a low 1/f noise corner.


 

 

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